2N5298 GP BJT
Datasheet: View
Stock
- 510 CENTAL SEMI
- 4 FAIRCHILD
- 442 NATIONAL SEMICONDUCTOR
- 5134 NEW JERSEY SEMICONDUCTOR
- 205 RCA
- 13 SOLITRON
- 23 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Maximum Collector Base Voltage | 80 | V |
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 1@0.15A@1.5A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 36000 | mW |
| Maximum Transition Frequency | 0.8(Min) | MHz |
| Type | NPN |