2N5301 GP BJT
Datasheet: View
Stock
- 5 FAIRCHILD
- 327 HARRIS
- 20 MOTOROLA
- 3940 NEW JERSEY SEMICONDUCTOR
- 19 RCA
- 2 SILICON TRANSISTOR CORP
- 1 SOLID SATE
- 2 TEXAS INSTRUMENT
- 3 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@1A@10A|2@2A@20A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 200000 | mW |
| Maximum Transition Frequency | 2(Min) | MHz |
| Type | NPN |