2N5302 GP BJT
Datasheet: View
Stock
- 24 FAIRCHILD
- 4 GENERAL ELECTRIC
- 62 HARRIS
- 183 MOTOROLA
- 7215 NEW JERSEY SEMICONDUCTOR
- 69 ON SEMI
- 4497 RCA
- 130 SILICON TRANSISTOR CORP
- 1 SOLITRON
- 29 ST MICRO
- 7 TEXAS INSTRUMENT
- 19 TOSHIBA
- 1 UNITED PAGE
- 101 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@1A@10A|1@1.5A@15A|2@2A@20A|3@6A@30A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 5000 | mW |
| Type | NPN |