2N5302G GP BJT
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- 2 ON SEMI
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.75@1A@10A|2@2A@20A|3@6A@30A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 200000 | mW |
| Maximum Transition Frequency | 2(Min) | MHz |
| Type | NPN |