2N5303 GP BJT
Datasheet: View
Stock
- 229 FAIRCHILD
- 2 GENERAL ELECTRIC
- 1949 HARRIS
- 53 MOTOROLA
- 4899 NEW JERSEY SEMICONDUCTOR
- 44 RCA
- 64 SILICON TRANSISTOR CORP
- 44 ST MICRO
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1A@10A|1.5@1.5A@15A|2@4A@20A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 5000 | mW |
| Type | NPN |