2N5309 GP BJT

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  • 67 GENERAL ELECTRIC
  • 1 MOTOROLA
  • 4191 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 0.75@1A@10A|1@1.5A@15A|2@2A@20A|3@6A@30A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 30 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 5000 mW
Type NPN