2N6051 Darlington BJT
Datasheet: View
Stock
- 8 GENERAL ELECTRIC
- 11 HARRIS
- 18 LAMBDA
- 180 MOTOROLA
- 3952 NEW JERSEY SEMICONDUCTOR
- 82 RCA
- 22 SILICON TRANSISTOR CORP
- 50 SOLID SATE
- 1 SOLID STATE INC
- 10 SOLID STATE TRANSISTOR
- 44 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 4@120mA@12A | V |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum Continuous DC Collector Current | 12 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 175 | °C |
| Minimum DC Current Gain | 1000@1A@3V|1000@6A@3V|150@12A@3V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP |