BLF278 RF MOSFET
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- 0 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Dual Common Source | |
| Maximum Continuous Drain Current | 18 | A |
| Maximum Drain Source Resistance | 300@10V | mOhm |
| Maximum Drain Source Voltage | 125 | V |
| Maximum Frequency | 225 | MHz |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 500000 | mW |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 2 |