BUV27 GP BJT

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  • 5319 NEW JERSEY SEMICONDUCTOR
  • 40 SGS

Trans GP BJT NPN 120V 12A 3-Pin(3+Tab) TO-220AB Rail

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 240 V
Maximum Collector Emitter Saturation Voltage 0.7@0.4A@4A 1.5@0.8A@8A
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 12 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 70000 mW
Type NPN