BUV27 GP BJT
Datasheet: View
Stock
- 5319 NEW JERSEY SEMICONDUCTOR
- 40 SGS
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 240 | V |
| Maximum Collector Emitter Saturation Voltage | 0.7@0.4A@4A | 1.5@0.8A@8A |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 12 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 70000 | mW |
| Type | NPN |