BUX98 GP BJT
Datasheet: View
Stock
- 8882 NEW JERSEY SEMICONDUCTOR
- 23 ST MICRO
- 16 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 850 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@4A@20A | V |
| Maximum Collector Emitter Voltage | 400 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 250000 | mW |
| Type | NPN |