BUX98A GP BJT

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  • 604 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 450V 30A 3-Pin(2+Tab) TO-3 Tube

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 1000 V
Maximum Collector Emitter Saturation Voltage 1.5@3.2A@16A|5@5A@24A V
Maximum Collector Emitter Voltage 450 V
Maximum DC Collector Current 30 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 250000 mW
Type NPN