BUX98C GP BJT
Datasheet: View
Stock
- 31 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 1200 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@3A@12A|2@5A@16A|3@8A@20A | V |
| Maximum Collector Emitter Voltage | 700 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 250000 | mW |
| Type | NPN |