IRF222 MOSFET

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  • 2706 NEW JERSEY SEMICONDUCTOR

Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Power MOSFET
Channel Type N
Configuration Single
Maximum Continuous Drain Current 4 A
Maximum Drain Source Voltage 200 V
Maximum Power Dissipation 40000 mW
Number of Elements per Chip 1