J271 JFET
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- 665 NATIONAL SEMICONDUCTOR
- 6 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Channel Type | P | |
| Configuration | Single | |
| Maximum Drain Gate Voltage | 30 | V |
| Maximum Gate Source Voltage | 30 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 350 | mW |
| Minimum Operating Temperature | -55 | °C |