MJE5740 Darlington BJT
Datasheet: View
Stock
- 3013 MOTOROLA
- 8602 NEW JERSEY SEMICONDUCTOR
- 3 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2.5@0.2A@4A|3.5@0.4A@8A|2.4@0.2A@4A | V |
| Maximum Collector Emitter Voltage | 300 | V |
| Maximum Continuous DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 200@4A@5V|50@500mA@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |