MJH16006A GP BJT

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  • 30 MOTOROLA
  • 3658 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 500V 8A 3-Pin(3+Tab) SOT-93

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 0.7@0.6A@3A|1@1A@5A V
Maximum Collector Emitter Voltage 500 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 125000 mW
Type NPN