PMD20K200 GP BJT

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  • 15 NEW JERSEY SEMICONDUCTOR

Trans BJT NPN 200V 14A TO-3

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Features Values Unit
Minimum DC Current Gain 300 @ IC = 10A; VCE = 3V
Maximum Collector Base Voltage 200 V
Maximum Collector Emitter Saturation Voltage 1.7 @ IC = 10A; IB = 50mA V
Maximum Collector Emitter Voltage 200 V
Maximum DC Collector Current 14 A
Maximum Emitter Base Voltage 2 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 150 W
Type NPN